规格书 |
IRFP460B, SiHG460B |
单位包 | 500 |
最小起订量 | 500 |
FET特点 | Logic Level Gate |
封装 | Tube |
安装类型 | Through Hole |
电流 - 连续漏极(Id ) @ 25 °C | 20A (Tc) |
的Vgs(th ) (最大)@ Id | 4V @ 250µA |
漏极至源极电压(Vdss) | 500V |
标准包装 | 500 |
供应商设备封装 | TO-247AC |
开态Rds(最大)@ Id ,V GS | 250 mOhm @ 10A, 10V |
FET型 | MOSFET N-Channel, Metal Oxide |
功率 - 最大 | 27W |
封装/外壳 | TO-247-3 |
输入电容(Ciss ) @ VDS | 3094pF @ 100V |
闸电荷(Qg ) @ VGS | 170nC @ 10V |
RoHS指令 | Lead free / RoHS Compliant |
安装风格 | Through Hole |
产品种类 | MOSFET |
晶体管极性 | N-Channel |
配置 | Single |
源极击穿电压 | 20 V |
连续漏极电流 | 20 A |
正向跨导 - 闵 | 12 S |
RDS(ON) | 250 mOhms |
功率耗散 | 278 mW |
栅极电荷Qg | 85 nC |
上升时间 | 31 ns |
漏源击穿电压 | 500 V |
RoHS | RoHS Compliant |
下降时间 | 56 ns |
Continuous Drain Current Id | :20A |
Drain Source Voltage Vds | :500V |
On Resistance Rds(on) | :0.2ohm |
Rds(on) Test Voltage Vgs | :10V |
Threshold Voltage Vgs | :2V |
功耗 | :278W |
Operating Temperature Min | :-55°C |
Operating Temperature Max | :150°C |
Transistor Case Style | :TO-247AC |
No. of Pins | :3 |
MSL | :MSL 1 - Unlimited |
工作温度范围 | :-55°C to +150°C |
Weight (kg) | 0.002 |
Tariff No. | 85412900 |
电流 - 连续漏极(Id ) @ 25 °C | 20A (Tc) |
SIHG460B-GE3也可以通过以下分类找到
SIHG460B-GE3相关搜索